Abstract
A detailed balance calculation reveals an extremely high efficiency of 63.2% for intermediate-band solar cells (IBSCs) under maximum sunlight concentration. However, an actual IBSC device with an efficiency larger than the Shockley-Queisser (SQ) limit has so far not been reported. The main difficulties lie in realizing an efficient sequential two-photon absorption (STPA) which requires a sufficiently long lifetime intermediate state or intermediate band. In this article, we propose the concept of a ratchet type IBSC, utilizing a long lifetime of rare-earth ion luminescence centers in Erbium-doped GaAs. The temperature dependent differential external quantum efficiency reveals a significant STPA contribution originating from the Er3+ luminescence center. All the results were modeled and interpreted by integrating the ratchet effect with up-conversion along with a density functional theory (DFT) simulation. Our work demonstrates that the long lifetime energy-transfer mechanism in Er3+ centers contributes directly to the formation of a ratchet type IB.
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