Abstract
A ferroelectric bulk channel field effect transistor has been developed using a thin film of lead titanate (PbTiO3) deposited on a n/p+ Si substrate by rf sputtering, in which the drain conductance changes in proportion to the remanent polarization of PbTiO3 thin film induced by the gate pulse voltage. Since the remanent polarization will stay a long time after the gate voltage is removed, the device possesses the memory characteristics. The device is a bulk channel structure and different from the reported surface channel type ferroelectric field effect transistor. Therefore, it possesses higher mobility. In this letter, current–voltage curves have been shown to compare with the theoretical analysis. The fit is quite good.
Published Version
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