Abstract

Two-dimensional X-ray photoelectron diffraction (XPED) patterns were obtained from a GaAs(001) sample as functions of both polar and azimuthal angles. Corresponding theoretical calculations based on the single scattering model were also made. Theoretical results agreed very well with experiments both for Ga3d and As3d photoelectrons. Ga3d and As3d photoelectrons showed different XPED patterns which reflect the difference of the atomic sites in the crystal, although their symmetric property was the same as that of the crystal.

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