Abstract
A detailed study of self-induced SiGe nanoislands on Si substrate formed at different substrate temperatures is presented. As a result of AFM investigations, the dependencies of the density, volume and shape of the islands on the growth temperature are established. Using Raman spectroscopy and HRXRD, the dependences of average values of strain and composition in the islands on the growth temperature are determined. Based on the experimental results and theoretical calculations, the dependence of SiGe island volume on Si content is established.
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