Abstract

We present a model to describe the responsivity of distributed read-out imaging devices following photon absorption in the absorber or in the base or top film of the superconducting tunnel junctions at either end of the absorber. The model describes the processes most relevant for photon detection, taking into account diffusion of quasiparticles across the absorber and imperfect confinement in the superconducting tunnel junctions via exchange of quasiparticles between absorber and the junction. It incorporates diffusion mismatch between superconducting tunnel junction and absorber, possible asymmetry between the two junctions and asymmetry between base and top electrodes within each junction. We have conducted dedicated experiments in which different experimental conditions were varied in order to test the model. A good agreement was found between the experimental results and model predictions.

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