Abstract
We investigate experimentally and theoretically the band structure of the (In0.53Ga0.47As)1−z (In0.52Al0.48As) z digital alloy grown by using molecular beam epitaxy as a function of z, where z is defined by the thickness fraction of the InGaAs and the InAlAs layers lattice-matched to InP. To calculate the band structures of the InGaAs/InAlAs digital alloy, we used the 4 × 4 k·p method; then, we compared these band structures with the photoluminescence experimental results. These experimental and theoretical results show that the InGaAs/InAlAs digital alloy not only can contribute to the method of band-gap engineering by using various types of thickness combinations but also can cover the wavelength gap of 1.2 μm (1.1 μm (GaAs) < λ < 1.3 μm (InP)), that only the quantum dot can cover. We also propose a quantum-well structure that is able to cover the wavelength gap.
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