Abstract
A second-order polynomial fit function of the experimental built-in electromechanical field in GaN-based light-emitting diodes is presented. The samples range from indium compositions of 10%–30%. The experimental built-in fields of the samples have been measured using electroreflectance spectroscopy. The comparison of the experiment and theory has also been presented. Numerical analysis of the effect of the indium-content on the band diagram, built-in field and internal quantum efficiency is also discussed.
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