Abstract

As an important metal oxide semiconductor, transition metal-doped zinc oxide (ZnO) has attracted great interest for various applications in optoelectronic, spintronic photovoltaic and photodetectors due to its significant chemical and physical properties. In this research study, pure and nickel (Ni)-doped ZnO nanostructured films were synthesized via the sol-gel method using the spin coating technique on glass substrates. The structural results revealed that all samples exhibited a polycrystalline wurtzite structure and a (002) plane preferred orientation. The crystallite size was reduced by Ni doping. The morphology micrographs indicate that the surface of thin films shows nanofiber structures. An optical study revealed the high transparency of the films. The photoluminescence (PL) showed one ultraviolet (UV) emission at 387 nm and different defect emissions for all films. The absorption, band gap and PL emissions intensities were influenced by Ni doping. Ni-doped ZnO nanostructured thin films revealed high UV sensitivity and photoresponse. Therefore, these thin films are a promising material for a UV photodetector. The dielectric function, absorption coefficient and energy band gap were also calculated and discussed by density functional theory (DFT), using the Ultra Soft Pseudo Potential (US-PP) approach implemented in the CASTEP code.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call