Experimental Analysis of 600V 4H-SiC Vertical and Lateral MOSFETs Fabricated on the same 6-Inch Substrate Using a Single Process

Abstract

This paper aims to provide detailed experimental results of 4H-SiC vertical and lateral MOSFETs fabricated on the same 6-inch substrate using a single process flow. The cell optimization and fabrication scheme of both vertical and lateral MOSFETs are described in this paper. The measured electrical characteristics from both structures such as on-resistance, transconductance, threshold voltage, breakdown voltage, and capacitances are discussed. Resistance distribution and figure-of-merits of [Ron×Ciss], [Ron×Coss], and [Ron×Crss] for vertical and lateral MOSFETs are compared to further improve the characteristic of the lateral MOSFET.