Abstract
This paper aims to provide detailed experimental results of 4H-SiC vertical and lateral MOSFETs fabricated on the same 6-inch substrate using a single process flow. The cell optimization and fabrication scheme of both vertical and lateral MOSFETs are described in this paper. The measured electrical characteristics from both structures such as on-resistance, transconductance, threshold voltage, breakdown voltage, and capacitances are discussed. Resistance distribution and figure-of-merits of [Ron×Ciss], [Ron×Coss], and [Ron×Crss] for vertical and lateral MOSFETs are compared to further improve the characteristic of the lateral MOSFET.
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