Experiment on VCSEL Composed of Special Structure DBRs in Integrated Optoelectronic Chip

Kai Liu,Xiaofeng Duan,Yongqing Huang,Junwei Luo,Yuan Zhong,Qi Wei,Qi Wang,Shiwei Cai,Xiaomin Ren

doi:10.1109/access.2019.2957408

Kai Liu, Xiaofeng Duan + Show 7 more

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https://doi.org/10.1109/access.2019.2957408

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In this paper, we have demonstrated the feasibility of the proposed integrated chip by the experiments on its laser part of Vertical-cavity Surface-emitting Laser (VCSEL). The success of the integrated chip depends on the special designed cavity-in DBR, and the VCSEL’s resonant cavity is composed by the cavity-in DBRs. With a gold reflector on top of the original integrated chip wafer to improve the Q value of the VCSEL’s resonant cavity, the VCSEL is successful to lase. Its threshold current is 3 mA, the slope efficiency is 0.84 W/A and the estimated maximum light power is 30 mW. The experiment illustrates that the cavity-in DBR is reasonable and practical and makes foundation for the realization of the integrated chip in single-fiber bi-directional optical interconnects.

Highlights

Vertical-cavity surface-emitting laser (VCSEL) exhibits great performance in short-reach data communications, such as low power consumption, high energy efficiency, to couple into the optical fiber due to its circular and non-astigmatic beam and low cost of manufacturing [1]
To improve the Q value of the VCSEL’s resonant cavity, a gold reflector is sputtered on the top mirror, and the VCSEL is successful to lase from bottom
Since a gold reflector is sputtered on the top mirror, the characteristic of the VCSEL can not be measured directly

Summary

Introduction

Vertical-cavity surface-emitting laser (VCSEL) exhibits great performance in short-reach data communications, such as low power consumption, high energy efficiency, to couple into the optical fiber due to its circular and non-astigmatic beam and low cost of manufacturing [1]. The integrated chip structure proposed in this paper is composed of VCSEL and PIN photodetector (PIN-PD), which transmits and receives optical signals simultaneously over two different wavelengths. Both of top mirror and bottom mirror of the VCSEL are constituted by cavity-in DBRs. The feasibility of the proposed integrated chip depends on this new kind of cavity-in DBR structure.

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