Abstract
The cubic boron nitride (cBN) single crystals present a higher expectation for deep ultraviolet (DUV) detectors. Simulations have been carried out using Synopsys TCAD to improve the performance of detectors. The light and dark current were observed by changing the parameters such as electrode spacing, doping concentration. The detector has the maximum response with the doping concentration of 1013 cm−3. The light-to-dark current is up to about 60 with an electrode width and spacing of 15 µm. The photocurrent was measured based on the prototype device.
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