Abstract
Boron nitride (BN) single crystals grown by employing a temperature gradient method under high-pressure and high-temperature conditions using a carefully purified Ba-B-N solvent system showed exciton-related cathodoluminescence peaks in the ultraviolet region around 200 nm. A series of peaks from the cubic phase of BN single crystal was assigned as the phonon-assisted free-exciton luminescence bands from which the indirect exciton gap energy was estimated to be 6.17 eV. The exciton binding energy was estimated to be 80 meV based on the temperature dependence of the exciton luminescence intensity. A dominant luminescence peak from hexagonal-phase BN single crystal was observed at 215 nm, which is 1000 times larger than the indirect exciton luminescence of type IIa diamond. This intense luminescence suggests that hexagonal BN is a direct band gap material.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
