Abstract
We have observed a high-temperature thermostimulated exoelectron emission from charged silicon nanocrystals with nitrided surface embedded into the amorphous SiO2 matrix. The developed Auger model allows understanding thermostimulated exoelectron emission origin and estimating energy activation of traps responsible for charge retention in this type of flash memory based on Si nanocrystals. The high activation energy Et of the electrons trapped in the nanocrystals confirms high potential of Si nanocrystal materials for fabrication of semiconductor memories with enhanced retention.
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