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Abstract
The thermostimulated exoelectron emission (TSEE) is applied for investigation of the processes of radiative defects recombination in the nearsurface layer. Results of TSEE studies of radiatively excited CsBr crystals are presented. Dose dependences of the decay kinetics, TSEE spectrum structure and exosums were studied. Concentration of exoemission-active centres (EAC) and TSEE kinetics parameters have been calculated on the base of the bulk thermoactivated anion sublattice defect recombination. The attained result correlate with the electron centres concentration for irradiated crystals. In the framework of the Auger-like anion defects recombinational bulk model of exoemission from irradiated wide-band-gap crystals, the energy spectra of the exoelectrons excited on the F-centres are attained.
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