Abstract
We have studied photoluminescence (PL) properties of GaN thin films at low temperatures for various excitation intensities. Under weak excitation intensities, the free exciton line as well as the bound exciton line appear in the PL spectrum. With an increase of the excitation intensity, the M-line and the P-line due to inelastic exciton–exciton interactions are clearly observed. Under strong excitation intensities, electron–hole plasmas (EHP) emission appears at lower energy below the M-line. The radiative recombination processes of highly excited GaN are discussed.
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