Abstract
This paper presents optical characteristics of Zn0.82Cd0.18Se/ZnSe single quantum well (SQW) structures grown by a low-pressure metalorganic vapor-phase epitaxy. The excitonic optical absorption and emission properties are studied by electroreflectance, photocurrent, and photoluminescence (PL) spectrum measurements under controlled high electric fields. The PL spectrum shows a considerable red shift (up to 20 meV) against the ground state of the heavy-hole exciton in the SQW, and is quite iNSensitive to the applied high electric field (>104V/cm). The results have indicated that the exciton responsible for the photon emission process (spontaneous/stimulated) is different from the ground state of the heavy-hole exciton, which is responsible for the photon absorption process.
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