Abstract
A theory of excitonic polarons in semiconductor quantum wells is presented. Using a unitary transformation, we have diagonalized the exciton-phonon interaction operator in a quasi-two-dimensional system partially and then calculated the ground-state energy of an excitonic polaron. We have numerically evaluated the energy gap shift and effective mass of an excitonic polaron. We have numerically evaluated the energy gap shift and effective mass of an excitonic polaron in GaAs-Al x Ga1−xAs systems. The results obtained here indicate that the polaronic effect is significant in the case of the light hole excitons in quantum wells of small well widths.
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