Abstract
Reflection and photoluminescence spectra of boron gallium nitride (BGaN) layers were observed. BGaN layers were grown on (0 0 0 1) 6H–SiC substrates without any buffer layers by metal-organic vapor-phase epitaxy (MOVPE). The emission peaks that originated from free-exciton recombination were observed in these layers. The band-gap energy of the BGaN layer was larger than that of the GaN layer. The binding energy of a free exciton in the BGaN layer was 26 meV, which nearly equals that in GaN.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
