Abstract
Reflection and photoluminescence spectra of boron gallium nitride (BGaN) layers were observed. BGaN layers were grown on (0 0 0 1) 6H–SiC substrates without any buffer layers by metal-organic vapor-phase epitaxy (MOVPE). The emission peaks that originated from free-exciton recombination were observed in these layers. The band-gap energy of the BGaN layer was larger than that of the GaN layer. The binding energy of a free exciton in the BGaN layer was 26 meV, which nearly equals that in GaN.
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