Abstract
Evidence is presented that a luminescence component observed at low temperatures near the high-energy limit of 'two-electron' donor bound-exciton (BE) satellite luminescence in pure single-crystal ZnSe arises from the radiative recombination of free excitons (FE) with simultaneous inelastic scattering at shallow neutral donors. This FE-related process is favoured compared with the BE as the donor concentration is increased in the range where impurity banding of the BE states occurs, and also possibly at very high excitation intensities according to a reinterpretation of recently published data. The effects of external electric fields are briefly discussed.
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