Abstract
We discuss measurement results of the exciton radiative lifetime in GaAs quantum wires grown by metalorganic chemical-vapor selective growth technique at 9 K. By changing the lateral width of the quantum wires in the range of 7–35 nm systematically, the lateral width dependence of the radiative exciton lifetime was measured. The results show that the measured lifetime increases from 260 to 422 ps with the decrease of the lateral width from 25 to 7 nm. This increase of the radiative lifetime can be explained by taking account of both reduced exciton coherence length and spreading of the wave function of electrons in the barrier region.
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