Abstract
Abstract Exciton (strong electron–hole interactions) and hot carriers (HCs) assisted by surface plasmon polaritons show promise to enhance the photoresponse of nanoelectronic and optoelectronic devices. In the current research, we develop a computational quantum framework to study the effect of coupled exciton and HCs on the photovoltaic energy distribution, scattering process, polarizability, and light emission of two-dimensional (2D) semiconductors. Using a stable 2D semiconductor (semihydrogenated SiB) as our example, we theoretically show that external strain and thermal effect on the SiB can lead to valley polarized plasmon quasiparticles and HC generation. Our results reveal that the electron–phonon and electron–electron (e–e) interactions characterize the correlation between the decay rate, scattering of excitons, and generation of HCs in 2D semiconductors. Moreover, phonon assisted luminescence spectra of SiB suggest that light emission can be enhanced by increasing strain and temperature. The polarized plasmon with strong coupling of electronic and photonics states in SiB makes it as a promising candidate for light harvesting, plasmonic photocurrent devices, and quantum information.
Highlights
After the first isolation of two-dimensional (2D) graphene monolayers in 2004 [1, 2], additional novel 2D nanomaterials with similar properties have been sought for a wide range of applications
To better understand the contributions of the mechanisms responsible for thermal effect, we considered a steadystate solution for the temperature-dependent intensity I for the exciton recombination, which is given by Eq 2: photoluminescence suggests that we can tune the light emission in the visible light range for photoelectronic devices made of 2D semiconductors
We use theory and computation to present a physical picture of SP valley polariton for 2D semiconductors using quantum mechanics
Summary
After the first isolation of two-dimensional (2D) graphene monolayers in 2004 [1, 2], additional novel 2D nanomaterials with similar properties have been sought for a wide range of applications. Tománek et al [3] have investigated structural and electronic properties of 2D boron–carbide monolayers, such as BC, BC3, BC5, and BC7 by utilizing first-principles calculations. Their results demonstrated that those structures possess suitable structural stability and semiconducting characteristics. Hansson et al [8] determined that low-dimensional honeycomb SiB nanosheets possess metallic behavior. They found that this compound is of satisfactory structural stability relative to silicene and boron sheets [9,10,11]. Unlike Hansson et al [8], who stated that the boron and silicon atoms are distributed alternately in the honeycomb SiB lattice, Dai et al [12] presented a new stable 2D SiB structure
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