Abstract
The electronic structure of GaSe/silicane (GaSe/SiH) van der Waals (vdW) heterostructure in response to a vertical electric field and strain was studied via first-principle calculations. The heterostructure had indirect band gap characteristics in the range [−1.0, −0.4] V/Å and direct band gap features in the range [−0.3, 0.2] V/Å. Furthermore, a type-II to type-I band alignment transition appeared at −0.7 and −0.3 V/Å. Additionally, the GaSe/SiH vdW heterostructure had a type-II band alignment under strain, but an indirect to direct band gap semiconductor transition occurred at −3%. These results indicated that the GaSe/SiH vdW heterostructure may have applications in novel nanoelectronic and optoelectronic devices.
Highlights
Recent studies have reported that two different 2D materials can be stacked vertically to construct a van der Waals heterostructure that retains the excellent characteristics of the original 2D materials but may present novel physical properties because of the vdW forces between the two layers [23,24,25,26]. is approach has opened up new ways to study nanoelectronics and optoelectronic devices; it has become a field of intense research interest
A number of nanoelectronic and optoelectronic devices based on monolayer GaSe with high photoresponse and on/off ratios have been successfully fabricated [31, 32]. ese theoretical and experimental studies predicted that monolayer GaSe is a promising candidate for nanoelectronic and optoelectronic applications
The electronic structures of the GaSe/SiH vdW heterostructure under an applied electric field and strain were determined via first-principles calculations
Summary
VdW forces between the two layers [23,24,25,26]. is approach has opened up new ways to study nanoelectronics and optoelectronic devices; it has become a field of intense research interest.Monolayer GaSe is a member of the 2D MX family that has successfully been fabricated via chemical vapor deposition [27], pulsed laser deposition [28], and micromechanical cleavage techniques [29], and it has subsequently been widely studied [30,31,32,33]. Numerous studies have demonstrated that the electronic band structure of SiH can be tuned via a Advances in Condensed Matter Physics uniform tensile strain and applied electric field [36,37,38]. To date, there have been no reports focusing on the combination of GaSe with SiH monolayers and its electronic structure, as well as the electric field and strain effects.
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