Abstract
The dependence of carrier density in silicon quantum wires sheathed with SiO2 on the wire diameter and the position of impurity atoms in respect to the wire center is analyzed theoretically. It is shown that, as the diameter of wires and nanocrystals decreases, the ionization energy of a dopant increases; therefore, the free carrier density decreases, and the screening of the Coulomb attraction becomes ineffective. As a result, the photoluminescence is defined by the radiative recombination of excitons even in the case of heavily doped Si. These conclusions are supported by the data of experimental study of spectral, excitation-power, and temperature dependences of photoluminescence in porous silicon structures fabricated on lightly and heavily doped Si substrates.
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