Location of Impurity Atoms in the Volume and Surface Layers of Silicon Crystals, by X-Ray Standing Wave in the Laue Geometry

Abstract

The dynamical theory of X-ray diffraction predicts the formation of standing wave fields inside crystal. The nodal and antinodal planes of these standing waves are parallel to the diffracting planes and have the same period. The angular dependence of the fluorescent yield is defined by the position of the atom under study with respect to nodes and antinodes of the standing wave. Thus, by comparing the experimental curve of the fluorescent yield with the theoretical one, it is possible to obtain information about the position of impurity atoms in the crystal lattice.