Abstract

We report on the emission properties of single molecular-beam-epitaxially grown InGaAs/GaAs quantum dashes. Supported by a few level rate equation model it has been revealed a decreased exciton to biexciton radiative lifetimes ratio being a fingerprint of a weak carrier confinement. Furthermore, a biexciton sideband, connected with the Coulomb interaction of quantum dash biexciton with excitons confined in the wetting layer (WL), has been observed in photoluminescence (PL). Both the effects have found a confirmation in direct measurements of PL decay times, including long radiative lifetimes of the WL states which appeared to have a localized character.

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