Abstract
Molecular beam epitaxy grown InAs/InGaAlAs/InP quantum dashes designed for the 1.5 μm range were investigated by microphotoluminescence spectroscopy. The exciton and biexciton emission from a single quantum dash was detected revealing a biexciton binding energy of about 0.4 meV. The dependence of the photoluminescence intensity versus the excitation power density was determined and analyzed using the three level rate equation model, which allowed to confirm that the observed lines originate from the same single quantum dash.
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