Abstract
The photoluminescence of intrinsic excitons in high purity AlxGa1−xAs layers is studied under interband excitation by circularly polarized light. To determine the nature of excitons, the luminescence depolarization effect in a transverse magnetic field (Hanle effect) is used. The experimental curves represent two contours. For the composition x = 0.15, additional peaks arranged symmetrically with respect to zero magnetic field are observed. It is shown that the luminescence is determined by excitons localized in a potential associated with alloy fluctuations. The appearance of the additional peaks is due to the crossing of J = 1 and J = 2 levels in a magnetic field. The exchange splitting of exciton levels, recombination and spin relaxation times are determined from a comparison between theoretical and experimental dependences.
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