Exciton recombination and spin relaxation in strong magnetic fields in ultrathin (In,Al)As/AlAs quantum wells with indirect band gap and type-I band alignment

Abstract

The exciton recombination and spin dynamics are studied in monolayer-thick (In,Al)As/AlAs quantum wells characterized by an indirect band gap and a type-I band alignment. The exciton recombination time and the photoluminescence intensity are strongly dependent on strength and orientation of an applied magnetic field. In contrast to no effect of an in-plane field, at a temperature of 1.8 K a magnetic field applied parallel to the growth axis drastically slows down the recombination and reduces the intensity of photoluminescence. The magnetic-field-induced circular polarization of photoluminescence is studied as a function of the magnetic field strength and direction, as well as sample temperature. The observed nonmonotonic behavior of these functions is provided by the interplay of bright and dark exciton states contributing to the emission. Taking into account the magnetic-field-induced redistribution of the indirect excitons between their bright and dark states, we evaluate the heavy-hole longitudinal $g$ factor of 3.6, the radiative recombination time for the bright excitons of 0.13 ms, and the nonradiative recombination time of the bright and dark excitons of 0.43 ms, as well as the spin relaxation times of electron of $25\phantom{\rule{4pt}{0ex}}\ensuremath{\mu}\mathrm{s}$ and heavy hole of $16\phantom{\rule{4pt}{0ex}}\ensuremath{\mu}\mathrm{s}$, bound in the exciton.