Exciton–donor complexes in a semiconductor quantum dot

Abstract

The binding energy of the ground state of charged and neutral exciton–donor complexes in a semiconductor quantum dot (QD) has been calculated as a function of the radius of the QD, using models with both an infinite and a finite potential barrier. The theoretical analysis is carried out using a variational approach in the framework of the adiabatic approximation. The behaviour of the binding energy of the complexes with the decrease of the radius of the QD is discussed.