Abstract
Resonant peaks superimposed on the direct tunneling current in the low-temperature transport of Schottky barrier metal-oxide-semiconductor field-effect transistor inversion layers are investigated. The resonances are attributed to single Pt atoms that have diffused from the metallic contacts into the depletion width near the metal/semiconductor interface. Excited-state spectroscopy and magnetic fields are used to identify different levels. A double donor level in a singlet state and another level that is attributed to a triple donor state are observed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
