Abstract
Single Si atoms can be deposited onto a Si(111)-7×7 sample surface from the tip of a scanning tunneling microscope, the Si atoms to be deposited being previously picked up by the tip from another place on the sample surface. The crystallographic position of these deposited Si atoms changes as their density increases. The deposited Si atoms can be re-removed by picking them up again with the tip, the substrate atomic arrangement remaining unperturbed. It is also possible to fill Si atom vacancies on the sample surface with a Si atom deposited from the tip.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
More From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.