Abstract
Abstract Optical properties of multi-layer In x Ga 1 − x As/GaAs dot-chain heterostructures are studied by means of lateral photoconductivity (PC). Effects of carrier generation and recombination on the photoresponsivity of deep defects and quantum dot arrays are considered. It is shown that the radiative recombination significantly affects the lateral PC spectra thus leading to a nonlinear dependence of photocurrent on excitation intensity. For ground state excitation of the quantum dots the photocurrent nonlinearities are determined by a competition of both generation and recombination processes which include thermal activation.
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