Abstract
Experimental investigation of surface acoustic wave (SAW) velocity, attenuation and electromechanical coupling coefficient dependences on ZnO layers thickness for GaAs‐SiO2‐IDT‐ZnO‐Al structures has been performed. It has been established that the structures studied grown on (001) cut of GaAs have higher electromechanical coupling coefficient compared to that of GaAs crystal with the same orientation. The Al film deposition on the top of these layered structures proved to change the SAW velocity. The investigation of SAW attenuation has demonstrated less attenuation for thinner ZnO layer.
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