Abstract
We have investigated the behaviors of the grain-growth and the electrical properties in excimer laser-induced polycrystalline silicon films by adding oxygen (poly- SiOx). The melting and solidification times in laser-induced crystallization were increased by adding oxygen into amorphous silicon films which promoted the grain-growth. The dark conductivity of poly- SiOx films was decreased with the increase of oxygen concentration up to 6.32×1020 cm-3. However, the degradation of dark conductivity by light stress was improved in poly- SiOx films probably due to the stable silicon networking. We have also observed that the electrical stability was enhanced in the poly- SiOx films with oxygen concentration of 9.1×1019 cm-3 without much decrease of dark conductivity.
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