Abstract
ABSTRACTApplication of excimer laser crystallization of Amorphous silicon (a-Si) has introduced a new, interesting potential technology for the fabrication of polycrystalline (poly-Si) thin film transistors. We are currently studying polycrystalline Si1−xGex thin films in order to determine whether this material can lead to improved electrical properties or to better processing requirements when compared with polycrystalline Si films. In this work we analyze by RBS, TEM, Raman spectroscopy and surface reflectance, the structure of thin Amorphous Si1−xGex films after irradiation with a XeCl excimer laser. The Amorphous SiGe films were prepared by evaporation of Si and Ge onto oxidized Si substrates using an electron gun in vaccum. The effects of laser energy fluence during irradiation are investigated. The Amorphous to crystalline transition is followed by in-situ measurement of time-resolved reflectivity.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
