Abstract
ABSTRACTLaser ablation provides a suitable technique of ferroelectric thin film deposition. We have used this technique to produce films of Pb1−xLax(Zr1−y Tiy)1−x/4O3 (PLZT), a class of ceramic materials which has a wide range of composition dependent electro-optical properties. PLZT films of (7/0/100) and (28/0/100) composition have been deposited onto both crystalline Si <100> and amorphous fused silica substrates. Laser ablation provides high deposition rates and good crystal structure of thin ferroelectric films on silicon. The methods required to achieve proper stoichiometry in the films are also discussed.
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