Abstract
We studied excimer laser annealing effects on silicon-rich silicon nitride films containing silicon quantum dots to develop silicon based flexible Light emitting diodes. The silicon-rich silicon nitride films were deposited by catalytic chemical vapor deposition system using a mixture of SiH4, NH3 and H2 gas. The substrate temperatures in all deposition process were less than 200 ° to use polyethersulphone substrate. The changing crystallity and density of silicon quantum dots were analyzed by photoluminescence spectra. The change in the luminescence behavior with nucleation of silicon quantum dots was observed after excimer laser annealing.
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