Abstract
The effects of XeCl excimer laser annealing on a nickel-induced crystallized polycrystalline silicon (poly-Si) film are described. A XeCl excimer laser was irradiated on a metal induced laterally crystallized (MILC) poly-Si film which incorporated 2 μm wide metal induced crystallized (MIC) poly-Si line patterns. On the irradiation of the laser beams with various laser energy densities from 270 to different melt and recrystallization phenomena were observed in the MILC poly-Si and in the MIC poly-Si region because the MIC poly-Si film had much higher Ni content than the MILC poly-Si film. To investigate the effect of the Ni content in the poly-Si film during the laser annealing, transmission electron microscopy and secondary ion mass spectrometry were used. Our experimental results show that the melting temperature of the poly-Si film decreases as the Ni content increases. With the optimum laser irradiation energy density of 2 μm long poly-Si grains grew in the MILC poly-Si film due to the gradual decrease of the melting temperature of the MILC poly-Si near the Ni-rich MIC poly-Si. © 2001 The Electrochemical Society. [DOI: 10.1149/1.1398279] All rights reserved.
Published Version
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