Abstract

Magnetic doping and proximity coupling can open a band gap in a topological insulator (TI) and give rise to dissipationless quantum conduction phenomena. Here, by combining these two approaches, we demonstrate a novel TI superlattice structure that is alternately doped with transition and rare earth elements. An unexpected exchange bias effect is unambiguously confirmed in the superlattice with a large exchange bias field using magneto-transport and magneto-optical techniques. Further, the Curie temperature of the Cr-doped layers in the superlattice is found to increase by 60 K compared to a Cr-doped single-layer film. This result is supported by density-functional-theory calculations, which indicate the presence of antiferromagnetic ordering in Dy:Bi2Te3 induced by proximity coupling to Cr:Sb2Te3 at the interface. This work provides a new pathway to realizing the quantum anomalous Hall effect at elevated temperatures and axion insulator state at zero magnetic field by interface engineering in TI heterostructures.

Highlights

  • Magnetic doping and proximity coupling can open a band gap in a topological insulator (TI) and give rise to dissipationless quantum conduction phenomena

  • Despite the ferromagnetic (FM) ordering temperatures being ∼25 K, the quantum anomalous Hall effect (QAHE) was only observed at low sub-K temperatures, which is attributed to Dirac-mass disorder,[5] i.e., the fact that the inhomogeneous spatial distribution of magnetic dopants leads to spatially varying band gap sizes

  • Since the size of the band gap is directly proportional to the magnetic moment in time-reversal symmetry (TRS)-broken TI materials, doping with rare earth (RE) elements such as Dy, which has a large atomic moment of up to 10.5 μB, has been considered an alternative approach to raise the QAHE temperature.[7]

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Summary

Introduction

Magnetic doping and proximity coupling can open a band gap in a topological insulator (TI) and give rise to dissipationless quantum conduction phenomena.

Results
Conclusion
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