Excessive Oxygen Peroxide Model‐Based Analysis of Positive‐Bias‐Stress and Negative‐Bias‐Illumination‐Stress Instabilities in Self‐Aligned Top‐Gate Coplanar In–Ga–Zn–O Thin‐Film Transistors (Adv. Electron. Mater. 5/2022)

Abstract

Bias-Stress Instability In article number 2101062, Sungju Choi, Hyuck-In Kwon, Dae Hwan Kim, and colleagues present an excess oxygen peroxide model, which simultaneously explains the positive-bias-stress and the negativebias-illumination-stress instabilities in commercial self-aligned top-gate coplanar indium-gallium-zinc oxide thin-film transistors. This model is verified by the effect of oxygen content on the generation and annihilation of subgap states and is essential to designing highly stable oxide thin-film transistors.