Abstract
Interfacial misfit arrays were embedded within two avalanche photodiode (APD) structures. This allowed GaSb absorption layers to be combined with wide-bandgap multiplication regions, consisting of GaAs and Al0.8Ga0.2As, respectively. The GaAs APD represents the simplest case. The Al0.8Ga0.2As APD shows reduced dark currents of 5.07 μAcm−2 at 90% of the breakdown voltage, and values for effective k=β/α below 0.2. Random-path-length modeled excess noise is compared with experimental data, for both samples. The designs could be developed further, allowing operation to be extended to longer wavelengths, using other established absorber materials which are lattice matched to GaSb.
Highlights
Excess noise in GaAs and AlGaAs avalanche photodiodes with GaSb absorption regions—composite structures grown using interfacial misfit arrays
Interfacial misfit arrays were embedded within two avalanche photodiode (APD) structures
The Al0.8Ga0.2As APD shows reduced dark currents of 5.07 lAcmÀ2 at 90% of the breakdown voltage, and values for effective k 1⁄4 b=a below 0.2
Summary
Interfacial misfit arrays were embedded within two avalanche photodiode (APD) structures. Excess noise in GaAs and AlGaAs avalanche photodiodes with GaSb absorption regions—composite structures grown using interfacial misfit arrays This allowed GaSb absorption layers to be combined with wide-bandgap multiplication regions, consisting of GaAs and Al0.8Ga0.2As, respectively.
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