Abstract
We herein present a nanoscale vanadium oxide (VO2) device with excellent selector characteristics such as a high on/off ratio (>; 50), fast switching speed ( ; 106 A/cm2). Owing to extrinsic defects, a large-area device with a 20-nm-thick VO2 layer underwent an electrical short. In contrast, after scaling the device active area (<; 5 × 104 nm2), excellent switching uniformity was obtained. This can be explained by the reduced defects and the metal-insulator transition of the whole nanoscale VO2. By integrating a bipolar resistive random access memory device with the VO2 selection device, a significantly improved readout margin was obtained. The VO2 selection device shows good potential for cross-point bipolar resistive memory applications.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
