Abstract
Oxide two-dimensional electron gas (2DEG) attracts much attention because of its various physical properties. 2DEG-based heterostructures are expected to exhibit highly attractive properties and become potential candidates for multifunctional electronic devices. A lateral heterojunction composed of YBa2Cu3O7-δ (YBCO) and quasi-2DEG (Q2DEG) at SrTiO3 surface has been fabricated by Ar+-ion-bombardment assistant method. The YBCO/Q2DEG heterostructure exhibits excellent rectifying characteristics at room temperature, with a rectification ratio of 70000 at ± 3 V bias. Large photoresponse is also observed in the YBCO/Q2DEG heterostructure when irradiated by visible light. A photocurrent/dark current ratio of 1000 is achieved under reverse 1.5 V bias and irradiation with 405 nm light at room temperature. Combining the advantages of Schottky diode and two-dimensional electron gas, the YBCO/Q2DEG heterostructure may provide more opportunities for electronic and optoelectronic devices in the future.
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