Abstract
SiGe alloy, owing to its high electron and hole mobility, has potential applications in high-speed microelec- tronic device technology. The optimization of such tech- nology requires the precise determination of Ge concentra- tion in the full range of composition and the understanding and control of the Ge-Si interdiffusion phenomenon. The most appropriate analytical technique with highest detection sensitivity (∼subparts per billion) for measuring elemental concentration is secondary ion mass spectrometry (SIMS). However, strong compositional dependence of secondary ion yield, i.e. "matrix effect," has always made SIMS quan- tification extremely difficult. A procedure for the accurate quantification of Ge concentration in molecular beam epi- taxy (MBE)-grown Si1−xGex (0 <x< 0.72) alloys based on MCs + -SIMS approach has been proposed. The "matrix effect" is shown to be completely suppressed for all Ge concentrations irrespective of impact Cs + ion energies. The novel methodology has successfully been applied for direct quantitative composition analysis of Si/Ge multilayer struc- ture.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.