Perspectives of Quantitative Depth Profiling

Abstract

This article primarily deals with the compensation of “matrix effect” in secondary ion mass spectrometry (SIMS) for direct quantitative analysis of materials using MCs+-SIMS approach. Emphasis has been given on exploring the formation mechanisms of MCs+n (n = 1, 2,..) molecular ions (M denotes the element to be analyzed and Cs+ is the bombarding ion) emitted in the SIMS process. Following a brief introduction on SIMS, a study on MCs+n molecular ions emitted from various metal and semiconductor targets under Cs+ primary bombardment has been discussed.