Abstract
Silicon technologies for HF applications have been proven for more than two decades, and technologies have greatly evolved. Whether CMOS or BiCMOS technologies, the unique combination of radio frequency, baseband, and digital functions allow a very high level of integration. While it is possible to achieve fully integrated transceivers, the major advantages of these silicon technologies lie mainly in their unparalleled performance in the field of frequency synthesis and frequency conversion. We propose in this paper a review of the major results obtained on these RF components since the beginning of the 2000s, also considering the impact of the technology node. The back-end of line (BEOL) process on which depends the quality of microwave monolithic integrated circuits (MMICs) is briefly presented in the introductory part. If circuit performances are tightly bound to the active devices (i.e., the heterojunction bipolar transistor SiGe HBT or CMOS transistor), passive elements (i.e., quality factor of inductors and varactors, losses of transmission, or interconnection lines) as well as the definition of the substrate also play a major role. The core of the article is oriented toward the noise of synthesized signals and frequency conversion. Frequency synthesis is presented through the analog design of a voltage-controlled oscillator (VCO) or through the direct digital frequency synthesis (DDFS), for which respective figures of merit are presented and discussed in a second section. The spectral purity of the oscillators being decisive in the definition of the throughput of a link is approached through the comparison of different figures of merit (FoM) for a set of circuits achievements over the selected period. If the realization of free oscillators is closely bound to the phase-locked loop (PLL)-type control loop for VCOs, the DDFS solution provides more direct and more flexible alternative at first sight. Therefore, these two solutions are analyzed collectively. Finally, the oscillator integrated in the transmitter or receiver supplies the needed LO (local oscillator) power to the frequency mixer in the frequency conversion module: henceforth, the third part of this study focuses on high-frequency mixer realizations. We thus consider this LO power in some advanced figure of merit mentioned in the second section. The design trade-off of the mixer is presented in an approach combining LO (conversion gain, channel isolation, and phase noise) and RF (HF noise figure and channel isolation) constraints. The final section provides a summary of the results and trends mentioned in the paper.
Highlights
There has been a lot of progress since the first achievement to the commercialization of microwave monolithic integrated circuits (MMICs) circuits, first developed on GaAs substrates in the 1980s, on silicon substrates at the end of the 1990s for BiCMOS technologies such as initiated by IBM [3] followed by many telecommunication companies
If voltage-controlled oscillator (VCO) based on CMOS on silicon and more recently CMOS on SOI technologies always take advantage of the latest researches, it is not clear how this size reduction of the gate length really improves the Leeson’s factor or other figures of merit (FoM) from Equations (1)–(5), as the dynamic power decreases and the low-frequency noise (LFN) increases when reducing the area of the active device
(>1 GHz) together with a moderate consumption (
Summary
There has been a lot of progress since the first achievement to the commercialization of MMIC circuits, first developed on GaAs substrates in the 1980s, on silicon substrates at the end of the 1990s for BiCMOS technologies such as initiated by IBM [3] followed by many telecommunication companies From this latter technology, it was possible to combine CMOS transistors for digital functions with SiGe HBTs for high-frequency analog applications, the Si substrate has higher loss than the GaAs substrate. In fully integrated MMIC transceivers (TxRx), either transmit (power amplifier, PA) or receive (low noise amplifier, LNA) amplifiers can be designed on the same (Bi)CMOS chip If these circuits can be processed with silicon HF technologies according to the needs of a specific radio-link budget, the best performances in power or in noise factor (respectively, in transmission or reception) are achieved with III-N or III-V technologies. An appropriate FoM should remain unchanged if a simultaneous modification of two dependent parameters occurs in the same proportion compared to that of their dependence
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