Abstract

The impact of the thickness of the carbon nanolayer on the depth distribution of the implanted nitrogen was examined. Ti6Al4V samples with a carbon nanolayer (20 and 40nm) were implanted with nitrogen with fluence of 1.2·1017cm−2 and an accelerating voltage of 90kV. GD-OES measurements showed an almost Gaussian-like nitrogen depth profile. The nitrogen peak moves deeper into the sample with increasing thickness of the nanolayer. The experimental depth profiles are in good agreement with the calculated results from the analytical model and from the SRIM2013 code.

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