Abstract
The single crystal diamond (SCD) has great potential in the application of optical windows, photoelectric devices, semiconductors and other fields owing to its excellent performance in optics, mechanics, and thermotics. The SCD was homoepitaxially deposited on High Pressure and High Temperature (HPHT) seed substrate through microwave plasma chemical vapor deposition (MPCVD) method using CH4/H2 as the reaction gas. Hydrogen plasma treatment was proposed to pretreat the seed crystal. The top surface of the epitaxial layer of SCD has a creased morphology and no polycrystalline rim growth on the side. The results showed that the transmittance of the epitaxial SCD film was primarily affected by the surface roughness, which was mainly influenced by the growth time. The photoluminescence at 738 nm was attributed to the silicon color center in the grown SCD, suggesting the application in optoelectronic devices.
Highlights
Diamond has many unique properties, including high carrier mobility, high dielectric breakdown threshold and unique chemical inertness, as well as excellent broadband optical transmission performance
It is not difficult to find that the morphology of epitaxial layer origins from the seed surface, and the creased morphology with different roughness can be obtained by controlling the growth time
Single crystal diamond (SCD) layer without polycrystalline rim was grown on High Pressure and High Temperature (HPHT) seed using the simple hydrogen plasma pretreatment
Summary
Diamond has many unique properties, including high carrier mobility, high dielectric breakdown threshold and unique chemical inertness, as well as excellent broadband optical transmission performance. In 2009, Liang and Meng et al prepared the SCD of gem-quality using microwave plasma chemical vapor deposition (MPCVD) method. Compared to the seed crystal, the lateral size of the SCD was expanded by 2.5 times. In addition to the growth of SCD with a large size, impurities and defects must be investigated when SCD is used as power semiconductors, spintronics, sensors and quantum computing devices. The SCD was homoepitaxially deposited on a HPHT seed crystal through microwave plasma chemical vapor deposition (MPCVD) method. Since the surface of the seed crystal has grooves owing to cutting process, a pretreatment must be performed. What factors affect the transmittance of the SCD was studied and the quality control strategies of the epitaxial SCD were explored
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