Abstract
We have examined the structural and thermoelectric properties of nanocomposites prepared by matrix-seeded growth, which consists of ion-beam-amorphization, followed by nanoscale recrystallization via annealing. We use a sputter-mask to increase the retained concentration of In+ ions in GaAs as a path towards the formation of nanoscale InAs crystals in an amorphous GaAs matrix. For the highest ion fluence, an enormous Seebeck coefficient of −12 mV/K is observed at 4 K. We discuss the temperature-dependence of the resistivity, Seebeck coefficient, and thermoelectric power factor in terms of the microstructure of the layers.
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